A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect
نویسندگان
چکیده
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2019
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2019.2928131